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BLF7G24L-140 Datasheet(PDF) 6 Page - NXP Semiconductors |
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BLF7G24L-140 Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 14 page BLF7G24L-140_7G24LS-140 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 — 1 August 2011 6 of 14 NXP Semiconductors BLF7G24L-140; BLF7G24LS-140 Power LDMOS transistor 7.3 Pulsed CW VDS = 28 V; IDq = 1300 mA. (1) f = 2300 MHz (2) f = 2400 MHz VDS = 28 V; IDq = 1300 mA. (1) f = 2300 MHz (2) f = 2400 MHz Fig 7. Pulsed CW power gain as a function of load power; typical values Fig 8. Pulsed CW drain efficiency as a function of load power; typical values PL (W) 0 200 160 80 120 40 001aan529 17.5 18.5 19.5 Gp (dB) 16.5 (1) (2) PL (W) 0 200 160 80 120 40 001aan530 30 20 40 50 ηD (%) 10 (1) (2) |
Similar Part No. - BLF7G24L-140_15 |
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Similar Description - BLF7G24L-140_15 |
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