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3

Pre-Irradiation

IRH7250

Parameter

Units

Test Conditions

Min

Max

Min

Max

Drain-to-Source Breakdown Voltage

200

—

200

—

V

Gate Threshold Voltage

2.0

4.0

1.25

4.5

Gate-to-Source Leakage Forward

—

100

—

100

nA

Gate-to-Source Leakage Reverse

—

-100

—

-100

Zero Gate Voltage Drain Current

—

25

—

50

µA

Static Drain-to-Source

➃

—

0.100

—

0.155

Ω

On-State Resistance (TO-3)

Static Drain-to-Source

➃

—

0.100

—

0.155

Ω

On-State Resistance (TO-204AE)

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Radiation Characteristics

1. Part numbers IRH7250

2. Part number IRH3250, IRH4250and IRH8250

Fig a. Single Event Effect, Safe Operating Area

Diode Forward Voltage

➃

—

1.4

—

1.4

V

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Table 2. Single Event Effect Safe Operating Area

Ion

LET

Energy

Range

(MeV)

(µm)

@

Cu

28

285

43

190

180

170

125

—

Br

36.8

305

39

100

100

100

50

—

0

50

100

150

200

0

-5

-10

-15

-20

VGS

Cu

Br