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IRH9150 Datasheet(PDF) 1 Page - International Rectifier |
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IRH9150 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  Absolute Maximum Ratings Parameter Units ID @ VGS = -12V, TC = 25°C Continuous Drain Current -22 ID @ VGS = -12V, TC = 100°C Continuous Drain Current -14 IDM Pulsed Drain Current À -88 PD @ TC = 25°C Max. Power Dissipation 150 W Linear Derating Factor 1.2 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy Á 500 mJ IAR Avalanche Current À -22 A EAR Repetitive Avalanche Energy À 1.5 mJ dv/dt Peak Diode Recovery dv/dt  -23 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range °C Lead Temperature 300 ( 0.063 in.(1.6mm) from case for 10s) Weight 11.5 (Typical ) g Pre-Irradiation International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. A RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AE) 05/13/14 www.irf.com 1 Product Summary Part Number Radiation Level RDS(on) ID IRH9150 100K Rads (Si) 0.075 Ω -22A IRH93150 300K Rads (Si) 0.075 Ω -22A For footnotes refer to the last page IRH9150 100V, P-CHANNEL RAD Hard ™ HEXFET ® TECHNOLOGY TO-204AE Features: n Single Event Effect (SEE) Hardened n Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Package n Light Weight PD-90879D |
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