BLF8G10LS-160V_15 datasheet(3/11 Pages) PHILIPS

Part #	BLF8G10LS-160V

Description	Power LDMOS transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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BLF8G10LS-160V

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Product data sheet

Rev. 2 — 24 October 2012

3 of 11

NXP Semiconductors

BLF8G10LS-160V

Power LDMOS transistor

6.

Characteristics

7.

Test information

7.1 Ruggedness in class-AB operation

BLF8G10LS-160V is capable of withstanding a load mismatch corresponding to

VSWR = 10 : 1 through all phases under the following conditions: VDS =30V;

IDq =1100mA; PL = 160 W (CW); f = 925 MHz to 960 MHz.

7.2 Impedance information

Table 6.

DC characteristics

Tj = 25 C unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

V(BR)DSS drain-source breakdown voltage VGS =0V; ID =2.2 mA

65

-

V

VGS(th)

gate-source threshold voltage

VDS =10 V; ID = 220 mA

1.5

1.9

2.3

V

IDSS

drain leakage current

VGS =0V; VDS = 28 V

--2.8

A

IDSX

drain cut-off current

VGS =VGS(th) +3.75 V;

VDS =10V

-39.0

-

A

IGSS

gate leakage current

VGS =11V; VDS = 0 V

-

280

nA

gfs

forward transconductance

VDS =10V; ID = 7.7 A

-

14.9

-

S

RDS(on)

drain-source on-state resistance VGS =VGS(th) + 3.75 V;

ID =7.7 A

-

85

151

m



Table 7.

RF characteristics

Test signal: 2-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on the CCDF; 3GPP test

model 1; 64 DPCH; f1 = 925 MHz; f2 = 930 MHz; f3 = 955 MHz; f4 = 960 MHz; RF performance at

VDS =30V; IDq = 1100 mA; Tcase =25 C; unless otherwise specified; in a class-AB production test

circuit.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Gp

power gain

PL(AV) = 35 W

18.4

19.9

-

dB

RLin

input return loss

PL(AV) =35W

-

15

10

dB



D

drain efficiency

PL(AV) = 35 W

27

30

-

%

ACPR

adjacent channel power ratio

PL(AV) =35W

-

38

32.5

dBc

Table 8.

Typical impedance information

IDq = 1100 mA; main transistor VDS =30V.

ZS and ZL defined in Figure 1.

f

ZS

ZL

(MHz)

(

)

(

)

925

4.5

 j4.1

1.2

 j2.4

942

5.9

 j4.0

1.2

 j2.3

960

6.2

 j4.7

1.2

 j2.5

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