BLF8G10LS-300P

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Product data sheet

Rev. 2 — 17 December 2013

2 of 13

NXP Semiconductors

BLF8G10LS-300P

Power LDMOS transistor

2.

Pinning information

[1]

Connected to flange.

3.

Ordering information

4.

Limiting values

[1]

Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF

calculator

5.

Thermal characteristics

Table 2.

Pinning

Pin

Description

Simplified outline

Graphic symbol

1drain1

2drain2

3gate1

4gate2

5source

[1]

Table 3.

Ordering information

Type number

Package

Name Description

Version

BLF8G10LS-300P

-

earless flanged balanced ceramic package; 4 leads

SOT539B

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

-

65

V

gate-source voltage

0.5

+13

V

storage temperature

65

+150

C

junction temperature

[1] -

225

C

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

0.29

K/W