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BLF8G20LS-200V Datasheet(PDF) 6 Page - NXP Semiconductors |
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BLF8G20LS-200V Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 14 page BLF8G20LS-200V All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 4 — 21 October 2013 6 of 14 NXP Semiconductors BLF8G20LS-200V Power LDMOS transistor 8.4.2 1-Carrier W-CDMA VDS =28V; IDq = 1600 mA; PAR = 7.2 dB at 0.01 probability on the CCDF. (1) f = 1805 MHz (2) f = 1843 MHz (3) f = 1880 MHz VDS =28V; IDq = 1600 mA; PAR = 7.2 dB at 0.01 probability on the CCDF. (1) f = 1805 MHz (2) f = 1843 MHz (3) f = 1880 MHz Fig 5. Power gain and drain efficiency as function of average output power; typical values Fig 6. Peak-to-average power ratio as a function of average output power; typical values VDS = 28 V; IDq = 1600 mA; PAR = 7.2 dB at 0.01 probability on the CCDF. (1) f = 1805 MHz (2) f = 1843 MHz (3) f = 1880 MHz Fig 7. Adjacent power channel ratio (5 MHz) as a function of average output power; typical values |
Similar Part No. - BLF8G20LS-200V_15 |
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Similar Description - BLF8G20LS-200V_15 |
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