Electronic Components Datasheet Search |
|
IRHF7110 Datasheet(PDF) 1 Page - International Rectifier |
|
IRHF7110 Datasheet(HTML) 1 Page - International Rectifier |
1 / 12 page Absolute Maximum Ratings Absolute Maximum Ratings Absolute Maximum Ratings Absolute Maximum Ratings Absolute Maximum Ratings Parameter Parameter Parameter Parameter Parameter Units Units Units Units Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 3.5 ID @ VGS = 12V, TC = 100°C Continuous Drain Current 2.2 IDM Pulsed Drain Current ➀ 14 PD @ TC = 25°C Max. Power Dissipation 15 W Linear Derating Factor 0.12 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy ➁ 68 mJ IAR Avalanche Current ➀ A EAR Repetitive Avalanche Energy ➀ mJ dv/dt Peak Diode Recovery dv/dt ➂ 5.5 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 ( 0.063 in.(1.6mm) from case for 10s) Weight 0.98 (Typical ) g Pre-Irradiation Pre-Irradiation Pre-Irradiation Pre-Irradiation Pre-Irradiation International Rectifiers RADHard HEXFET® technol- ogy provides high performance power MOSFETs for space applications. This technology has over a de- cade of proven performance and reliability in satellite applications. These devices have been character- ized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of elec- trical parameters. oC A RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET THRU-HOLE (TO-39) THRU-HOLE (TO-39) THRU-HOLE (TO-39) THRU-HOLE (TO-39) THRU-HOLE (TO-39) 8/10/01 www.irf.com 1 Product Summary Product Summary Product Summary Product Summary Product Summary Part Number Radiation Level Part Number Radiation Level Part Number Radiation Level Part Number Radiation Level Part Number Radiation Level R R R R RDS(on) DS(on) DS(on) DS(on) DS(on) IIIII DDDDD IRHF7110 100K Rads (Si) 0.60Ω 3.5A IRHF3110 300K Rads (Si) 0.60Ω 3.5A IRHF4110 600K Rads (Si) 0.60Ω 3.5A IRHF8110 1000K Rads (Si) 0.60Ω 3.5A For footnotes refer to the last page IRHF7110 IRHF7110 IRHF7110 IRHF7110 IRHF7110 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL RAD Hard RAD Hard RAD Hard RAD Hard RAD Hard HEXFET HEXFET HEXFET HEXFET HEXFET ® TECHNOLOGY TECHNOLOGY TECHNOLOGY TECHNOLOGY TECHNOLOGY TO-39 TO-39 TO-39 TO-39 TO-39 Features: Features: Features: Features: Features: ! Single Event Effect (SEE) Hardened ! Low RDS(on) ! Low Total Gate Charge ! Proton Tolerant ! Simple Drive Requirements ! Ease of Paralleling ! Hermetically Sealed ! Ceramic Package ! Light Weight PD - 90671D |
Similar Part No. - IRHF7110_15 |
|
Similar Description - IRHF7110_15 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |