BLF8G22LS-220

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Product data sheet

Rev. 3 — 30 May 2013

9 of 12

NXP Semiconductors

BLF8G22LS-220

Power LDMOS transistor

9.

Handling information

10. Abbreviations

11. Revision history

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

Table 10.

Abbreviations

Acronym

Description

3GPP

3rd Generation Partnership Project

CCDF

Complementary Cumulative Distribution Function

CW

Continuous Wave

DPCH

Dedicated Physical CHannel

LDMOS

Laterally Diffused Metal Oxide Semiconductor

PAR

Peak-to-Average Ratio

SMD

Surface Mounted Device

VSWR

Voltage Standing Wave Ratio

W-CDMA

Wideband Code Division Multiple Access

Table 11.

Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

BLF8G22LS-220 v.3

20130530

Product data sheet

-

BLF8G22LS-220 v.2

Modifications:

• Table 8 on page 3: description, text ‘half device’ removed

BLF8G22LS-220 v.2

20130415

Product data sheet

-

BLF8G22LS-220 v.1

BLF8G22LS-220 v.1

20121220

Objective data sheet

-

-