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2SB632 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SB632 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 4 page JMnic Product Specification 2 Silicon PNP Power Transistors 2SB632 2SB632K CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SB632 -25 V(BR)CEO Collector-emitter breakdown voltage 2SB632K IC=-1mA; RBE=∞ -35 V 2SB632 -25 V(BR)CBO Collector-base breakdown voltage 2SB632K IC=-10μA ;IE=0 -35 V V(BR)EBO Emitter-base breakdown voltage IE=-10μA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A -0.4 -0.9 V VBEsat Base-emitter saturation voltage IC=-1.5A ;IB=-0.15A -1.1 -1.5 V ICBO Collector cut-off current VCB=-20V; IE=0 -1 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -1 μA hFE-1 DC current gain IC=-0.5A ; VCE=-2V 60 320 hFE-2 DC current gain IC=-1.5A ; VCE=-2V 30 fT Transition frequency IC=-50mA ; VCE=-10V 100 MHz COB Collector output capacitance f=1MHz ; VCB=-10V 45 pF Switching times ton Turn-on time 0.06 μs tf Fall time 0.08 μs tstg Storage time IC=500mA ; VCE=12V IB1=-IB2=50mA 0.40 μs hFE-1 Classifications D E F 60-120 100-200 160-320 |
Similar Part No. - 2SB632_15 |
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Similar Description - 2SB632_15 |
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