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IRHF57234SE Datasheet(PDF) 2 Page - International Rectifier |
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IRHF57234SE Datasheet(HTML) 2 Page - International Rectifier |
2 / 8 page IRHF57234SE Pre-Irradiation 2 www.irf.com Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case — — 5.0 RthJA Junction-to-Ambient — 175 — Typical socket mount °C/W Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 250 — — V VGS = 0V, ID = 1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.31 — V/°C Reference to 25°C, ID = 1.0mA Voltage RDS(on) Static Drain-to-Source On-State — — 0.42 Ω VGS = 12V, ID = 3.3A Resistance VGS(th) Gate Threshold Voltage 2.5 — 4.5 V VDS = VGS, ID = 1.0mA gfs Forward Transconductance 4.0 — — S VDS >= 15V, IDS = 3.3A Ã IDSS Zero Gate Voltage Drain Current — — 10 VDS= 200V ,VGS=0V —— 25 VDS = 200V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V Qg Total Gate Charge — — 32 VGS =12V, ID = 5.2A Qgs Gate-to-Source Charge — — 11 nC VDS = 125V Qgd Gate-to-Drain (‘Miller’) Charge — — 16 td(on) Turn-On Delay Time — — 25 VDD = 125V, ID = 5.2A tr Rise Time — — 100 VGS =12V, RG = 7.5Ω td(off) Turn-Off Delay Time — — 35 tf Fall Time — — 40 LS + LD Total Inductance — 7.0 — Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Input Capacitance — 1007 — VGS = 0V, VDS = 25V Coss Output Capacitance — 155 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 8 — nA Ã nH ns µA Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — 5.2 ISM Pulse Source Current (Body Diode) À — — 20.8 VSD Diode Forward Voltage — — 1.5 V Tj = 25°C, IS = 5.2A, VGS = 0V Ã trr Reverse Recovery Time — — 287 ns Tj = 25°C, IF = 5.2A, di/dt ≤ 100A/µs QRR Reverse Recovery Charge — — 2.3 µCVDD ≤ 25V Ã ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A |
Similar Part No. - IRHF57234SE_15 |
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Similar Description - IRHF57234SE_15 |
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