IRHF57234SE

Pre-Irradiation

2

www.irf.com

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

RthJC

Junction-to-Case

—

—

5.0

RthJA

Junction-to-Ambient

—

175

—

Typical socket mount

°C/W

Note: Corresponding Spice and Saber models are available on International Rectifier Website.

For footnotes refer to the last page

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

250

—

—

V

VGS = 0V, ID = 1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown

—

0.31

—

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

—

—

0.42

Ω

VGS = 12V, ID = 3.3A

Resistance

VGS(th)

Gate Threshold Voltage

2.5

—

4.5

V

VDS = VGS, ID = 1.0mA

gfs

Forward Transconductance

4.0

—

—

S

VDS >= 15V, IDS = 3.3A Ã

IDSS

Zero Gate Voltage Drain Current

—

—

10

VDS= 200V ,VGS=0V

——

25

VDS = 200V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

—

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

—

—

-100

VGS = -20V

Qg

Total Gate Charge

—

—

32

VGS =12V, ID = 5.2A

Qgs

Gate-to-Source Charge

—

—

11

nC

VDS = 125V

Qgd

Gate-to-Drain (‘Miller’) Charge

—

—

16

Turn-On Delay Time

—

—

25

VDD = 125V, ID = 5.2A

tr

Rise Time

—

—

100

VGS =12V, RG = 7.5Ω

Turn-Off Delay Time

—

—

35

tf

Fall Time

—

—

40

LS + LD

Total Inductance

—

7.0

—

Measured from Drain lead (6mm /0.25in.

from package) to Source lead (6mm /0.25in.

from package) with Source wires internally

bonded from Source Pin to Drain Pad

Ciss

Input Capacitance

—

1007

—

VGS = 0V, VDS = 25V

Coss

Output Capacitance

—

155

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

8

—

nA

Ã

nH

ns

µA

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

5.2

ISM

Pulse Source Current (Body Diode)

À

—

—

20.8

VSD Diode Forward Voltage

—

—

1.5

V

trr

Reverse Recovery Time

—

—

287

ns

Tj = 25°C, IF = 5.2A, di/dt ≤ 100A/µs

QRR Reverse Recovery Charge

—

—

2.3

µCVDD ≤ 25V Ã

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A