IRHF597130

Pre-Irradiation

2

www.irf.com

Note: Corresponding Spice and Saber models are available on International Rectifier Website.

For footnotes refer to the last page

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

-6.7

ISM

Pulse Source Current (Body Diode)

À

—

—

-26.8

VSD Diode Forward Voltage

—

—

-5.0

V

trr

Reverse Recovery Time

—

—

150

ns

Tj = 25°C, IF = -6.7A, di/dt ≤ -100A/µs

QRR Reverse Recovery Charge

—

—

408

nC

VDD ≤ -50V Ã

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

-100

—

—

V

VGS = 0V, ID = -1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown —

-0.13

—

V/°C

Reference to 25°C, ID = -1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

—

—

0.24

Ω

VGS = -12V, ID = -4.3A

Resistance

VGS(th)

Gate Threshold Voltage

-2.0

—

-4.0

V

VDS = VGS, ID = -1.0mA

gfs

Forward Transconductance

4.3

—

—

S ( )

VDS = -15V, IDS = -4.3A Ã

IDSS

Zero Gate Voltage Drain Current

—

—

-10

VDS = -80V ,VGS = 0V

—

—

-25

VDS = -80V,

VGS = 0V, TJ =125°C

IGSS

Gate-to-Source Leakage Forward

—

—

-100

VGS = -20V

IGSS

Gate-to-Source Leakage Reverse

—

—

100

VGS = 20V

Qg

Total Gate Charge

—

—

40

VGS =-12V, ID = -6.7A

Qgs

Gate-to-Source Charge

—

—

16

nC

VDS = -50V

Qgd

Gate-to-Drain (‘Miller’) Charge

—

—

11

Turn-On Delay Time

—

—

25

VDD = -50V, ID = -6.7A

tr

Rise Time

—

—

50

VGS =-12V, RG = 7.5Ω

Turn-Off Delay Time

—

—

45

tf

Fall Time

—

—

125

LS + LD

Total Inductance

—

7.0

—

Measured from Drain lead (6mm /0.25in.

from package) to Source lead (6mm /0.25in.

from package) with Source wires internally

bonded from Source Pin to Drain Pad

Ciss

Input Capacitance

—

1250

—

VGS = 0V, VDS = -25V

Coss

Output Capacitance

—

318

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

28

—

Rg

Internal Gate Resistance

—

8.0

—

Ω

f = 1.0MHz, open drain

nA

Ã

nH

ns

µA

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

RthJC

Junction-to-Case

—

—

5.0

RthJA

Junction-to-Ambient

—

—

175

°C/W

Typical socket mount