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IRHF597130 Datasheet(PDF) 2 Page - International Rectifier |
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IRHF597130 Datasheet(HTML) 2 Page - International Rectifier |
2 / 8 page IRHF597130 Pre-Irradiation 2 www.irf.com Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — -6.7 ISM Pulse Source Current (Body Diode) À — — -26.8 VSD Diode Forward Voltage — — -5.0 V Tj = 25°C, IS = -6.7A, VGS = 0V Ã trr Reverse Recovery Time — — 150 ns Tj = 25°C, IF = -6.7A, di/dt ≤ -100A/µs QRR Reverse Recovery Charge — — 408 nC VDD ≤ -50V Ã ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage -100 — — V VGS = 0V, ID = -1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — -0.13 — V/°C Reference to 25°C, ID = -1.0mA Voltage RDS(on) Static Drain-to-Source On-State — — 0.24 Ω VGS = -12V, ID = -4.3A Resistance VGS(th) Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID = -1.0mA gfs Forward Transconductance 4.3 — — S ( ) VDS = -15V, IDS = -4.3A Ã IDSS Zero Gate Voltage Drain Current — — -10 VDS = -80V ,VGS = 0V — — -25 VDS = -80V, VGS = 0V, TJ =125°C IGSS Gate-to-Source Leakage Forward — — -100 VGS = -20V IGSS Gate-to-Source Leakage Reverse — — 100 VGS = 20V Qg Total Gate Charge — — 40 VGS =-12V, ID = -6.7A Qgs Gate-to-Source Charge — — 16 nC VDS = -50V Qgd Gate-to-Drain (‘Miller’) Charge — — 11 td(on) Turn-On Delay Time — — 25 VDD = -50V, ID = -6.7A tr Rise Time — — 50 VGS =-12V, RG = 7.5Ω td(off) Turn-Off Delay Time — — 45 tf Fall Time — — 125 LS + LD Total Inductance — 7.0 — Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Input Capacitance — 1250 — VGS = 0V, VDS = -25V Coss Output Capacitance — 318 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 28 — Rg Internal Gate Resistance — 8.0 — Ω f = 1.0MHz, open drain nA Ã nH ns µA Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case — — 5.0 RthJA Junction-to-Ambient — — 175 °C/W Typical socket mount |
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