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2SB649 Datasheet(PDF) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SB649 Datasheet(HTML) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
1 / 4 page JMnic Product Specification Silicon PNP Power Transistors 2SB649 2SB649A DESCRIPTION ・ ・With TO-126 package ・Complement to type 2SD669/669A ・High breakdown voltage VCEO:-120/-160V ・High current -1.5A ・Low saturation voltage,excellent hFE linearity APPLICATIONS ・For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SB649 -180 VCBO Collector-base voltage 2SB649A Open emitter -180 V 2SB649 -120 VCEO Collector-emitter voltage 2SB649A Open base -160 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -1.5 A ICM Collector current-Peak -3 A Ta=25℃ 1 PD Total power dissipation TC=25℃ 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ |
Similar Part No. - 2SB649_15 |
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Similar Description - 2SB649_15 |
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