IRHG57110

Pre-Irradiation

2

www.irf.com

For footnotes refer to the last page

Source-Drain Diode Ratings and Characteristics (Per Die)

Parameter

Min Typ Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

1.6

ISM

Pulse Source Current (Body Diode)



—

—

6.4

VSD Diode Forward Voltage

—

—

1.2

V

trr

Reverse Recovery Time

—

—

110

ns

Tj = 25°C, IF = 1.6A, di/dt ≤ 100A/µs

QRR Reverse Recovery Charge

—

—

380

nC

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) (Per Die)

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

100

—

V

VGS = 0V, ID = 1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown

—

0.14

—

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

—

—

0.29

VGS = 12V, ID = 1.0A

Resistance

VGS(th)

Gate Threshold Voltage

2.0

—

4.0

V

VDS = VGS, ID = 1.0mA

gfs

Forward Transconductance

1.0

—

—

S

IDSS

Zero Gate Voltage Drain Current

—

—

10

VDS = 80V, VGS= 0V

——

25

VDS = 80V,

VGS = 0V, TJ =125°C

IGSS

Gate-to-Source Leakage Forward

—

—

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

—

—

-100

VGS = -20V

Qg

Total Gate Charge

—

—

17

VGS =12V, ID = 1.6A,

Qgs

Gate-to-Source Charge

—

—

4.4

nC

VDS = 50V

Qgd

Gate-to-Drain (‘Miller’) Charge

—

—

3.9

Turn-On Delay Time

—

—

21

VDD = 50V, ID = 1.6A,

tr

Rise Time

—

—

16

VGS =12V, RG = 7.5Ω

Turn-Off Delay Time

—

—

30

tf

Fall Time

—

—

15

LS + LD

Total Inductance

—

10

—

Measured from Drain lead (6mm /0.25in.

from package) to Source lead (6mm /0.25in.

from package) with Source wires internally

bonded from Source Pin to Drain Pad

Ciss

Input Capacitance

—

370

—

VGS = 0V, VDS = 25V

Coss

Output Capacitance

—

110

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

3.4

—

nA

„

nH

ns

µA

Ω

—

Note: Corresponding Spice and Saber models are available on the International Rectifier Website.

Thermal Resistance (Per Die)

Parameter

Min Typ Max Units

Test Conditions

RthJA

Junction-to-Ambient

—

—

90

Typical socket mount

°C/W