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IRHG567110 Datasheet(PDF) 3 Page - International Rectifier |
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IRHG567110 Datasheet(HTML) 3 Page - International Rectifier |
3 / 14 page www.irf.com 3 Pre-Irradiation IRHG567110 For footnotes refer to the last page Source-Drain Diode Ratings and Characteristics (Per Die) Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — -0.96 ISM Pulse Source Current (Body Diode) — — -3.84 VSD Diode Forward Voltage — — -5.0 V Tj = 25°C, IS = -0.96A, VGS = 0V trr Reverse Recovery Time — — 86 ns Tj = 25°C, IF = -0.96A, di/dt ≤ -100A/µs QRR Reverse Recovery Charge — — 240 nC VDD ≤ -25V ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A Thermal Resistance (Per Die) Parameter Min Typ Max Units Test Conditions RthJA Junction-to-Ambient — — 90 Typical socket mount °C/W Electrical Characteristics For Each P-Channel Device @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage -100 — — V VGS = 0V, ID = -1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — -0.14 — V/°C Reference to 25°C, ID = -1.0mA Voltage RDS(on) Static Drain-to-Source On-State — — 0.96 VGS = -12V, ID = -0.6A Resistance VGS(th) Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID = -1.0mA gfs Forward Transconductance 1.1 — — S VDS = -15V, IDS = -0.6A IDSS Zero Gate Voltage Drain Current — — -10 VDS = -80V, VGS = 0V — — -25 VDS = -80V, VGS = 0V, TJ =125°C IGSS Gate-to-Source Leakage Forward — — -100 VGS = - 20V IGSS Gate-to-Source Leakage Reverse — — 100 VGS = 20V Qg Total Gate Charge — — 13.4 VGS = -12V, ID = -0.96A, Qgs Gate-to-Source Charge — — 3.7 nC VDS = -50V Qgd Gate-to-Drain (‘Miller’) Charge — — 3.0 td(on) Turn-On Delay Time — — 21 VDD = -50V, ID = -0.96A, tr Rise Time — — 17 VGS = -12V, RG = 7.5Ω td(off) Turn-Off Delay Time — — 40 tf Fall Time — — 90 LS + LD Total Inductance — 10 — Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Input Capacitance — 390 — VGS = 0V, VDS = 25V Coss Output Capacitance — 100 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 7.0 — nA nH ns µA Ω Note: Corresponding Spice and Saber models are available on International Rectifier Website. |
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