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IRHG597110 Datasheet(PDF) 3 Page - International Rectifier |
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IRHG597110 Datasheet(HTML) 3 Page - International Rectifier |
3 / 8 page www.irf.com 3 Pre-Irradiation IRHG597110 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
(Per Die) Parameter 100KRads(Si)1 300K Rads (Si)2 Units Test Conditions Min Max Min Max BVDSS Drain-to-Source Breakdown Voltage -100 — -100 — V VGS = 0V, ID = -1.0mA VGS(th) Gate Threshold Voltage - 2.0 -4.0 - 2.0 -4.0 VGS = VDS, ID = -1.0mA IGSS Gate-to-Source Leakage Forward — -100 — -100 nA VGS = -20V IGSS Gate-to-Source Leakage Reverse — 100 — 100 VGS = 20 V IDSS Zero Gate Voltage Drain Current — -10 — -10 µA VDS= -80V, VGS =0V RDS(on) Static Drain-to-Source — 0.916 — 0.936 Ω VGS = -12V, ID = -0.6A On-State Resistance (TO-39) RDS(on) Static Drain-to-Source — 0.96 — 0.98 Ω VGS = -12V, ID = -0.6A On-State Resistance (MO-036AB) 1. Part number IRHG597110 2. Part number IRHG593110 VSD Diode Forward Voltage — -3.5 — -3.5 V VGS = 0V, IS = -0.96A Fig a. Typical Single Event Effect, Safe Operating Area For footnotes refer to the last page LET Energy Range VDS (V) (MeV/(mg/cm2)) (MeV) (µm) @VGS = @VGS = @VGS = @VGS = @VGS = 0V 5V 10V 15V 20V 38 ± 5% 270 ± 7.5% 35 ± 7.5% -100 -100 -100 -100 -100 61 ± 5% 330 ± 7.5% 30 ± 7.5% -100 -100 -100 -100 -25 84 ± 5% 350 ± 7.5% 28 ± 7.5% -100 -100 -100 -30 - -120 -100 -80 -60 -40 -20 0 0 5 10 15 20 Bias VGS (V) LET=38 ± 5% LET=61 ± 5% LET=84 ± 5% Table 2. Typical Single Event Effect Safe Operating Area (Per Die) |
Similar Part No. - IRHG597110_15 |
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Similar Description - IRHG597110_15 |
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