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3

Pre-Irradiation

IRHLF87Y20

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capabil-

ity. The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Radiation Characteristics

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Fig a. Typical Single Event Effect, Safe Operating Area

Parameter

Units

Test Conditions

Min

Max

Drain-to-Source Breakdown Voltage

20

—

V

Gate Threshold Voltage

1.0

2.3

Gate-to-Source Leakage Forward

—

100

nA

Gate-to-Source Leakage Reverse

—

-100

Zero Gate Voltage Drain Current

—

1.0

µA

Static Drain-to-Source

„

On-State Resistance (TO-39)

—

32

m

Ω

Diode Forward Voltage

„

—

1.2

V

1. Part numbers IRHLF87Y20, IRHLF83Y20

Table 2. Typical Single Event Effect Safe Operating Area

0

4

8

12

16

20

-10

-8

-6

-4

-2

0

Bias VGS (V)

LET=37 ± 5%

LET=60 ± 5%

LET=81 ± 5%

LET

Energy

Range

VDS (V)

(MeV)

(µm)

@VGS=

@VGS=

@VGS=

@VGS=

@VGS=

@VGS=

0V

-1V

-2V

-3V

-5V

-10V

37 ± 5%

298 ± 5%

38 ± 5%

18

18

8

4

60 ± 5%

320 ± 5%

32 ± 7.5%

18

18

15

12

8

-

81 ± 5%

375 ± 7.5%

28 ± 7.5%

18

18

12

6

-