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IRHLNA797064 Datasheet(PDF) 1 Page - International Rectifier |
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IRHLNA797064 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 9 page  Absolute Maximum Ratings Parameter Units ID @VGS = -4.5V,TC = 25°C Continuous Drain Current -56* ID @VGS = -4.5V,TC = 100°C Continuous Drain Current -56* IDM Pulsed Drain Current À -224 PD @ TC = 25°C Max. Power Dissipation 250 W Linear Derating Factor 2.0 W/°C VGS Gate-to-Source Voltage ±10 V EAS Single Pulse Avalanche Energy Á 1060 mJ IAR Avalanche Current À -56 A EAR Repetitive Avalanche Energy À 25 mJ dv/dt Peak Diode Recovery dv/dt  -3.7 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range Pckg. Mounting Surface Temp. 300 (for 5s) Weight 3.3 (Typical) g Pre-Irradiation °C A RADIATION HARDENED IRHLNA797064 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2) 03/01/11 www.irf.com 1 60V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLNA797064 100K Rads (Si) 0.015 Ω -56A* IRHLNA793064 300K Rads (Si) 0.015 Ω -56A* For footnotes refer to the last page SMD-2 Features: n 5V CMOS and TTL Compatible n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Package n Surface Mount n Light Weight International Rectifier’s R7 TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers. * Current is limited by package 2N7622U2 PD-97174A PRELIMINARY |
Similar Part No. - IRHLNA797064_15 |
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Similar Description - IRHLNA797064_15 |
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