BLF10M6160_BLF10M6LS160

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Product data sheet

Rev. 1 — 24 June 2014

5 of 12

NXP Semiconductors

BLF10M6160; BLF10M6LS160

Power LDMOS transistor

[1]

American Technical Ceramics type 100B or capacitor of same quality.

[2]

TDK or capacitor of same quality.

7.3 Graphical data

7.3.1 1-Tone CW

Table 9.

List of components (see Figure 1 and Figure 2)

All capacitors should be soldered vertically.

Component

Description

Value

Remarks

C1, C2, C3,

C4

multilayer ceramic chip capacitor 68 pF

[1]

C5, C6

multilayer ceramic chip capacitor 560 pF

[1]

C7, C8

multilayer ceramic chip capacitor 330 nF, 50 V [2]

C9, C10

multilayer ceramic chip capacitor 1.5

F, 50 V [2]

C11, C12

multilayer ceramic chip capacitor 4.5

F, 50 V [2]

C13

multilayer ceramic chip capacitor 2.20 pF

[1]

C14

multilayer ceramic chip capacitor 2.7 pF

[1]

C15

SMD tantalum capacitor

47

F, 20 V

C16

electrolytic capacitor

220

F

L1

ferrite SMD bead

-

Ferroxcube BDS 3/3/8.9-4S2

or equivalent

R1

SMD resistor

4.7

, 0.1 W

R2

SMD resistor

6.8

, 0.1 W

Fig 3.

Power gain and drain efficiency as function of output power; typical values

0

200

160

80

120

40

001aah475

20

22

24

(dB)

18

20

40

60

0

(%)