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IRHM7Z60 Datasheet(PDF) 1 Page - International Rectifier

Part # IRHM7Z60
Description  Simple Drive Requirements
Download  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRHM7Z60 Datasheet(HTML) 1 Page - International Rectifier

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Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 12V, TC = 25°C
Continuous Drain Current
35*
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
35*
IDM
Pulsed Drain Current ➀
140
PD @ TC = 25°C
Max. Power Dissipation
250
W
Linear Derating Factor
2.0
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy ➁
500
mJ
IAR
Avalanche Current ➀
35
A
EAR
Repetitive Avalanche Energy ➀
25
mJ
dv/dt
Peak Diode Recovery dv/dt ➂
0.35
V/ns
T J
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 ( 0.063 in. (1.6mm) from case for 10s)
Weight
9.3 (Typical )
g
Pre-Irradiation
International Rectifier’s RAD-Hard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
oC
A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
12/20/01
www.irf.com
1
Product Summary
Part Number
Radiation Level
RDS(on)
ID
IRHM7Z60
100K Rads (Si)
0.014
Ω 35*A
IRHM3Z60
300K Rads (Si)
0.014
Ω 35*A
IRHM4Z60
600K Rads (Si)
0.014
Ω 35*A
IRHM8Z60
1000K Rads (Si)
0.014
Ω 35*A
For footnotes refer to the last page
*Current is limited by internal wire diameter
IRHM7Z60
30V, N-CHANNEL
RAD-Hard
HEXFET
®
TECHNOLOGY
TO-254AA
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
PD - 91701B


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