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IRHM7Z60 Datasheet(PDF) 1 Page - International Rectifier |
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IRHM7Z60 Datasheet(HTML) 1 Page - International Rectifier |
1 / 8 page Absolute Maximum Ratings Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 35* ID @ VGS = 12V, TC = 100°C Continuous Drain Current 35* IDM Pulsed Drain Current ➀ 140 PD @ TC = 25°C Max. Power Dissipation 250 W Linear Derating Factor 2.0 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy ➁ 500 mJ IAR Avalanche Current ➀ 35 A EAR Repetitive Avalanche Energy ➀ 25 mJ dv/dt Peak Diode Recovery dv/dt ➂ 0.35 V/ns T J Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 ( 0.063 in. (1.6mm) from case for 10s) Weight 9.3 (Typical ) g Pre-Irradiation International Rectifier’s RAD-Hard HEXFET® technol- ogy provides high performance power MOSFETs for space applications. This technology has over a de- cade of proven performance and reliability in satellite applications. These devices have been character- ized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of elec- trical parameters. oC A RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) 12/20/01 www.irf.com 1 Product Summary Part Number Radiation Level RDS(on) ID IRHM7Z60 100K Rads (Si) 0.014 Ω 35*A IRHM3Z60 300K Rads (Si) 0.014 Ω 35*A IRHM4Z60 600K Rads (Si) 0.014 Ω 35*A IRHM8Z60 1000K Rads (Si) 0.014 Ω 35*A For footnotes refer to the last page *Current is limited by internal wire diameter IRHM7Z60 30V, N-CHANNEL RAD-Hard ™HEXFET ® TECHNOLOGY TO-254AA Features: n Single Event Effect (SEE) Hardened n Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Package n Light Weight PD - 91701B |
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