BLF188XRG

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© NXP Semiconductors N.V. 2014. All rights reserved.

Product data sheet

Rev. 1 — 30 June 2014

3 of 13

NXP Semiconductors

BLF188XRG

Power LDMOS transistor

6.

Characteristics

(1)

 = 1 %

(2)

 = 2 %

(3)

 = 5 %

(4)

 = 10 %

(5)

 = 20 %

(6)

 = 50 %

(7)

 = 100 % (DC)

Fig 1.

Transient thermal impedance from junction to case as a function of pulse

duration

Table 6.

DC characteristics

Symbol Parameter

Conditions

Min

Typ

Max

Unit

voltage

135

--V

gate-source threshold voltage

1.25

1.9

2.25

V

gate-source quiescent voltage

0.68

1.3

1.8

V

drain leakage current

--2.8

A

drain cut-off current

-77

-A

gate leakage current

-

-

280

nA

drain-source on-state

resistance

-0.08

-

