BLF642

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© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 2 — 22 July 2011

3 of 12

NXP Semiconductors

BLF642

Broadband power LDMOS transistor

6.

Characteristics

7.

Application information

7.1 Ruggedness in class-AB operation

The BLF642 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1

power.

Table 6.

Characteristics per section

Symbol Parameter

Conditions

Min Typ

Max Unit

65

-

-

V

gate-source threshold voltage

1.4

1.9

2.4

V

gate-source quiescent voltage

1.5

2.0

2.5

V

drain leakage current

-

-

1.4

A

drain cut-off current

8.0

9.0

-

A

gate leakage current

-

-

50

nA

forward transconductance

-

3.3

-

S

drain-source on-state resistance

-300

-

m



input capacitance

f=1MHz

-39

-

pF

output capacitance

f=1MHz

-15

-

pF

feedback capacitance

f=1MHz

-0.84

-

pF

Table 7.

RF performance in a common-source class-AB circuit

Mode of operation

f



D

(MHz)

(V)

(W)

(dB)

(%)

CW, class-AB

1300

32

35

> 18

> 59