BLF645_1

© NXP B.V. 2010. All rights reserved.

Product data sheet

Rev. 01 — 27 January 2010

3 of 13

NXP Semiconductors

BLF645

Broadband power LDMOS transistor

6.

Characteristics

7.

Application information

7.1 Ruggedness in class-AB operation

The BLF645 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1

power.

Table 6.

Characteristics per section

Symbol

Parameter

Conditions

Min

Typ

Max Unit

65

--V

gate-source threshold voltage

1.4

1.9

2.4

V

gate-source quiescent voltage

1.5

2.0

2.5

V

drain leakage current

--1.4

μA

drain cut-off current

-14

-

A

gate leakage current

-

-

120

nA

forward transconductance

-

6.4

-

S

drain-source on-state resistance

-

220

-

m

Ω

input capacitance

f=1MHz

-69

-

pF

output capacitance

f=1MHz

-25

-

pF

feedback capacitance

f=1MHz

-1.2

-pF

Table 7.

RF performance in a common-source class-AB circuit

Mode of operation

f

η

D

(MHz)

(V)

(W)

(dB)

(%)

CW, class-AB

1300

32

100

> 16.5

> 53