1.

Product profile

1.1 General description

A 200 W LDMOS RF power transistor for broadcast transmitter and industrial

applications. The transistor is suitable for the frequency range HF to 1500 MHz. The

excellent ruggedness and broadband performance of this device makes it ideal for digital

applications.

1.2 Features and benefits

(RoHS)

1.3 Applications

BLF647P

Broadband power LDMOS transistor

Rev. 2 — 12 April 2013

Product data sheet

Table 1.

Application information

Test signal

f



D

IMD3

(MHz)

(V)

(A)

(W)

(W)

(dB)

(%)

(dBc)

Pulsed, class-B

1300

32

0.1

-

200

18

70

-

CW, class-B

1300

32

0.1

200

-

18

70

-

2-tone, class-AB

32

0.7

75

-

19

48

33