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BLF888A Datasheet(PDF) 1 Page - NXP Semiconductors |
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BLF888A Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 17 page 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. [1] Measured at = 10 %; t p = 100 s. [2] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [3] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 1.2 Features and benefits Excellent ruggedness (VSWR 40 : 1 through all phases) Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W Suitable for CW UHF and ISM applications High power gain High efficiency Designed for broadband operation (470 MHz to 860 MHz) Internal input matching for high gain and optimum broadband operation Excellent reliability Easy power control Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC BLF888A; BLF888AS UHF power LDMOS transistor Rev. 5 — 4 November 2013 Product data sheet Table 1. Application information RF performance at VDS = 50 V unless otherwise specified. Mode of operation f PL(AV) PL(M) Gp D IMD3 IMDshldr PAR (MHz) (W) (W) (dB) (%) (dBc) (dBc) (dB) RF performance in a common source narrowband test circuit CW 650 - 600 20 67 - - - CW (42 V) 650 - 500 20 69 - - - 2-tone, class-AB f1 = 860; f2 = 860.1 250 - 21 46 32 - - pulsed, class-AB [1] 860 - 600 20 58 - - - DVB-T (8k OFDM) 858 110 - 21 31 - 32 [2] 8.2 [3] 858 125 - 21 32.5 - 30 [2] 8.0 [3] RF performance in a common source 470 MHz to 860 MHz broadband test circuit DVB-T (8k OFDM) 858 110 - 20 30 - 32 [2] 8.0 [3] 858 120 - 20 31 - 31 [2] 7.8 [3] |
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