1.

Product profile

1.1 General description

A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial

applications. The excellent ruggedness of this device makes it ideal for digital and analog

transmitter applications.

[1]

Measured [dBc] with delta marker at 4.3 MHz from center frequency.

[2]

PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on

CCDF.

1.2 Features and benefits

1.3 Applications

BLF888B; BLF888BS

UHF power LDMOS transistor

Rev. 2 — 12 July 2013

Product data sheet

Table 1.

Application information

Mode of operation

f



D

IMD3

PAR

(MHz)

(W)

(W)

(dB) (%) (dBc)

(dBc)

(dB)

RF performance in a common source 860 MHz narrowband test circuit

2-tone, class-AB

250

-

21

46

34

-

-

DVB-T (8k OFDM)

858

120

-

21

33

-

31[1]

8.2 [2]

RF performance in a common source 470 MHz to 860 MHz broadband test circuit

DVB-T (8k OFDM)

858

120

-

20

32

-

32 [1]

8.0 [2]