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BLF2425M6L180P Datasheet(PDF) 3 Page - NXP Semiconductors |
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BLF2425M6L180P Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 12 page BLF2425M6L180P_25M6LS180P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 3 — 12 July 2013 3 of 12 NXP Semiconductors BLF2425M6L(S)180P Power LDMOS transistor 5. Thermal characteristics 6. Characteristics 7. Test information 7.1 Ruggedness in class-AB operation The BLF2425M6L180P and BLF2425M6LS180P are capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS =28 V; IDq =10mA; PL = 180 W (CW); f = 2450 MHz. Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-case) thermal resistance from junction to case Tcase =80 C; PL = 180 W 0.38 K/W Table 6. DC characteristics Tj = 25 C per section; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS =0V; ID = 1.44 mA 65 --V VGS(th) gate-source threshold voltage VDS =10 V; ID = 144 mA 1.4 1.8 2.4 V IDSS drain leakage current VGS =0V VDS = 28 V --3 A VDS = 65 V --5 A IDSX drain cut-off current VGS =VGS(th) +3.75 V; VDS =10V -24 -A IGSS gate leakage current VGS =11 V; VDS = 0 V - - 300 nA gfs forward transconductance VDS =10V; ID =7.2 A - 10 - S RDS(on) drain-source on-state resistance VGS =VGS(th) + 3.75 V; ID =5A -0.1 - Table 7. RF characteristics Test signal: CW; f = 2450 MHz; VDS = 28 V; IDq = 10 mA; Tcase = 25 C unless otherwise specified in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit Gp power gain PL = 180 W 11.0 13.3 - dB D drain efficiency PL = 180 W 50 53.5 - % RLin input return loss PL =180 W - 15 9dB |
Similar Part No. - BLF2425M6L180P_15 |
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