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IRHM9230 Datasheet(PDF) 3 Page - International Rectifier |
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IRHM9230 Datasheet(HTML) 3 Page - International Rectifier |
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3 / 4 page  IRHM9230 Parameter 100K Rads (Si) Units Test Conditions min. max. BVDSS Drain-to-Source Breakdown Voltage -200 — VGS = 0V, ID = -1.0 mA VGS(th) Gate Threshold Voltage -2.0 -4.0 VGS = VDS, ID = -1.0 mA IGSS Gate-to-Source Leakage Forward — -100 VGS = -20V IGSS Gate-to-Source Leakage Reverse — 100 VGS = 20V IDSS Zero Gate Voltage Drain Current — -25 µA VDS = 0.8 x Max Rating, VGS = 0V RDS(on)1 Static Drain-to-Source — 0.8 Ω VGS = -12V, ID = -4.1A On-State Resistance One VSD Diode Forward Voltage — -5.0 V TC = 25°C, IS = -6.5A,VGS = 0V International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability. The hardness assurance program at International Rectifier uses two radiation environments. Every manufacturing lot is tested in a low dose rate (total dose) environment per MlL-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of -12 volts per note 6 and a VDSS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post-radiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1. The values in Table 1 will be met for either of the two low dose rate test circuits that are used. Radiation Performance of P-Channel Rad Hard HEXFETs Both pre- and post-radiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. It should be noted that at a radiation level of 1 x 105 Rads (Si), no change in limits are specified in DC parameters. High dose rate testing may be done on a special request basis, using a dose rate up to 1 x 1012 Rads (Si)/Sec. International Rectifier radiation hardened P-Channel HEXFETs are considered to be neutron-tolerant, as stated in MIL-PRF-19500 Group D. International Rectifier P- Channel radiation hardened HEXFETs have been characterized in heavy ion Single Event Effects environment and the results are shown in Table 3. IRHM9230 Device Radiation Characteristics Table 2. High Dose Rate 1011 Rads (Si)/sec1012 Rads (Si)/sec Parameter Min. Typ Max. Min.Typ. Max. Units Test Conditions VDSS Drain-to-Source Voltage — — -160 — — -160 V Applied drain-to-source voltage during gamma-dot IPP — -100 — — -100 — A Peak radiation induced photo-current di/dt — -800 — — -160 — A/µsec Rate of rise of photo-current L1 1 — — 20 — µH Circuit inductance required to limit di/dt Table 3. Single Event Effects LET (Si) Fluence Range VDS Bias VGS Bias Parameter Typ. Units Ion (MeV/mg/cm2) (ions/cm2)( µm) (V) (V) BVDSS -200 V Ni 28 1 x 105 ~41 -200 5 V nA Table 1. Low Dose Rate |
Similar Part No. - IRHM9230_15 |
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Similar Description - IRHM9230_15 |
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