IRHMB57260SE

Pre-Irradiation

2

www.irf.com

Note: Corresponding Spice and Saber models are available on International Rectifier Web site.

For footnotes refer to the last page

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

RthJC

Junction-to-Case

—

—

0.60

RthCS

Case-to-Sink

— 0.21

—

°C/W

RthJA

Junction-to-Ambient

—

—

48

Typical socket mount

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

45

ISM

Pulse Source Current (Body Diode)

À

—

—

180

VSD Diode Forward Voltage

—

—

1.2

V

trr

Reverse Recovery Time

—

—

450

ns

Tj = 25°C, IF = 45A, di/dt ≤100A/µs

QRR Reverse Recovery Charge

—

—

6.9

µCVDD ≤ 25V Ã

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

200

—

—

V

VGS = 0V, ID = 1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown

—

0.25

—

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

—

—

0.044

Ω

VGS = 12V, ID = 29A

Resistance

VGS(th)

Gate Threshold Voltage

2.5

—

4.5

V

VDS = VGS, ID = 1.0mA

gfs

Forward Transconductance

35

—

—

S ( )VDS = 15V, IDS = 29A Ã

IDSS

Zero Gate Voltage Drain Current

—

—

10

VDS= 160V ,VGS=0V

——

25

VDS = 160V,

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

—

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

—

—

-100

VGS = -20V

Qg

Total Gate Charge

—

—

165

VGS =12V, ID = 45A

Qgs

Gate-to-Source Charge

—

—

45

nC

VDS = 100V

Qgd

Gate-to-Drain (‘Miller’) Charge

—

—

75

Turn-On Delay Time

—

—

35

VDD = 100V, ID = 45A

tr

Rise Time

—

—

125

VGS =12V, RG = 2.35Ω

Turn-Off Delay Time

—

—

80

tf

Fall Time

—

—

50

LS + LD

Total Inductance

—

6.8

—

Measured from Drain lead (6mm /0.25in.

from package) to Source lead (6mm /0.25in.

from package) with Source wires internally

bonded from Source Pin to Drain Pad

Ciss

Input Capacitance

—

5295

—

VGS = 0V, VDS = 25V

Coss

Output Capacitance

—

900

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

37

—

Rg

Internal Gate Resistance

—

1.47

—

Ω

f = 0.89MHz, open drain

nA

Ã

nH

ns

µA