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IRHMS597Z60 Datasheet(PDF) 1 Page - International Rectifier |
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IRHMS597Z60 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  Absolute Maximum Ratings Parameter Units ID @ VGS = -12V, TC = 25°C Continuous Drain Current -45* ID @ VGS = -12V, TC = 100°C Continuous Drain Current -45* IDM Pulsed Drain Current À -180 PD @ TC = 25°C Max. Power Dissipation 208 W Linear Derating Factor 1.67 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy Á 1250 mJ IAR Avalanche Current À -45 A EAR Repetitive Avalanche Energy À 20.8 mJ dv/dt Peak Diode Recovery dv/dt  -0.6 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 (0.063in./1.6mm from case for 10s) Weight 9.3 (Typical) g Pre-Irradiation International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. oC A RADIATION HARDENED IRHMS597Z60 POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 10/02/08 www.irf.com 1 30V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHMS597Z60 100K Rads (Si) 0.014 Ω -45A* IRHMS593Z60 300K Rads (Si) 0.014 Ω -45A* For footnotes refer to the last page 5 5 Low-Ohmic TO-254AA Features: n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight * Current is limited by package PD-94666C |
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