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IRHMS57260SE Datasheet(PDF) 1 Page - International Rectifier |
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IRHMS57260SE Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  Absolute Maximum Ratings Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 45 ID @ VGS = 12V, TC = 100°C Continuous Drain Current 29 IDM Pulsed Drain Current À 180 PD @ TC = 25°C Max. Power Dissipation 208 W Linear Derating Factor 1.67 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy Á 256 mJ IAR Avalanche Current À 45 A EAR Repetitive Avalanche Energy À 20.8 mJ dv/dt Peak Diode Recovery dv/dt  19.8 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 (0.063 in.(1.6 mm from case for 10s)) Weight 9.3 ( Typical) g International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. oC A 09/07/04 www.irf.com 1 For footnotes refer to the last page TO-254AA Pre-Irradiation Low-Ohmic Features: n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight RADIATION HARDENED JANSR2N7476T1 POWER MOSFET 200V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) REF: MIL-PRF-19500/685 IRHMS57260SE Product Summary Part Number Radiation Level R DS(on) ID QPL Part Number IRHMS57260SE 100K Rads (Si) 0.044 Ω 45A JANSR2N7476T1 5 5 TECHNOLOGY PD - 94765 |
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