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IRHN2C50SE Datasheet(PDF) 3 Page - International Rectifier |
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IRHN2C50SE Datasheet(HTML) 3 Page - International Rectifier |
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3 / 4 page  Radiation Performance of Rad Hard HEXFETs IRHN2C50SE, IRHN7C50SE Devices Radiation Characteristics International Rectifier Radiation Hardened HEX- FETs are tested to verify their hardness capability. The hardness assurance program at International Rectifier uses two radiation environments. Every manufacturing lot is tested in a low dose rate (total dose) environment per MlL-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of 12 volts per note 6 and a VDSS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post-radiation limits of the devices irradiated to 0.5 x 105 Rads (Si) and 1 x 105 Rads (Si) are identical and are pre- sented in Table 1, column 1, IRHN2C50SE and IRHN7C50SE, respectively. The values in Table 1 will be met for either of the two low dose rate test circuits that are used. Both pre- and post-radiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. It should be noted that at a radiation level of 1 x 105 Rads (Si), no change in limits are specified in DC parameters. High dose rate testing may be done on a special request basis, using a dose rate up to 1 x 1012 Rads (Si)/Sec. International Rectifier radiation hardened HEXFETs have been characterized in neutron and heavy ion Single Event Effects (SEE) environments. Single Event Effects characterization is shown in Table 3. V nA Table 1. Low Dose Rate IRHN2C50SE 50K Rads (Si) Parameter IRHN7C50SE 100K Rads (Si) Units Test Conditions Min. Max. BVDSS Drain-to-Source Breakdown Voltage 600 — VGS = 0V, ID = 1.0 mA VGS(th) Gate Threshold Voltage 2.0 4.5 VGS = VDS, ID = 1.0 mA IGSS Gate-to-Source Leakage Forward — 100 VGS = 20V IGSS Gate-to-Source Leakage Reverse — -100 VGS = -20V IDSS Zero Gate Voltage Drain Current — 50 µAVDS = 0.8 x Max Rating, VGS = 0V RDS(on)1 Static Drain-to-Source — 0.60 Ω VGS = 12V, ID = 6.5A On-State Resistance One VSD Diode Forward Voltage — 1.62 V TC = 25°C, IS = 10.4A, VGS = 0V Table 2. High Dose Rate 1011 Rads (Si)/sec 1012 Rads (Si)/sec Parameter Min. Typ Max. Min. Typ. Max. Units Test Conditions VDSS Drain-to-Source Voltage — — 480 — — 480 V Applied drain-to-source voltage during gamma-dot IPP — 6.4 — — 6.4 — A Peak radiation induced photo-current di/dt — — 16 — — 2.3 A/µsec Rate of rise of photo-current L1 20 — — 137 — — µH Circuit inductance required to limit di/dt Table 3. Single Event Effects LET (Si) Fluence Range VDS Bias VGS Bias Parameter Typ. Units Ion (MeV/mg/cm2) (ions/cm2)( µm) (V) (V) BVDSS 600 V Ni 28 1 x 105 ~35 480 -5 |
Similar Part No. - IRHN2C50SE_15 |
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Similar Description - IRHN2C50SE_15 |
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