2SB1085_15 datasheet(2/3 Pages) JMNIC

Part #	2SB1085

Description	Silicon PNP Power Transistors

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Manufacturer	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

Direct Link	http://www.jmnic.com

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JMnic

Product Specification

2

Silicon PNP Power Transistors

2SB1085

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-emitter breakdown voltage

IC=-1mA ,IB=0

-120

V

V(BR)CBO

Collector-base breakdown voltage

IC=-50μA ,IE=0

-120

V

V(BR)EBO

Emitter-base breakdown voltage

IE=-50μA ,IC=0

-5

V

VCEsat

Collector-emitter saturation voltage

IC=-1A; IB=-0.1A

-2.0

V

VBEsat

Base-emitter saturation voltage

IC=-1A; IB=-0.1A

-1.5

V

ICBO

Collector cut-off current

VCB=-100V; IE=0

-1.0

μA

IEBO

Emitter cut-off current

VEB=-4V; IC=0

-1.0

μA

hFE

DC current gain

IC=-0.1A ; VCE=-5V

60

320

COB

Output capacitance

IE=0 ; VCB=-10V,f=1MHz

30

pF

fT

Transition frequency

IC=-0.1A ; VCE=-5V

50

MHz

hFE classifications

D

E

F

60-120

100-200

160-320

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2SB1085 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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