PMEG2010AEJ_15 datasheet(3/9 Pages) PHILIPS

Part #	PMEG2010AEJ

Description	20 V, 1 A very low VF MEGA Schottky barrier rectifier in SOD323F package

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PMEG2010AEJ_3

Product data sheet

Rev. 03 — 15 January 2010

3 of 9

NXP Semiconductors

PMEG2010AEJ

20 V, 1 A very low VF MEGA Schottky barrier rectifier

6.

Thermal characteristics

[1]

For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse

power losses PR are a significant part of the total power losses. Nomograms for determining the reverse

power losses PR and IF(AV) rating are available on request.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

[4]

Solder point of cathode tab.

7.

Characteristics

[1]

Pulse test: tp ≤ 300 μs; δ≤ 0.02.

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1][2] -

-

350

K/W

[1][3] -

-

150

K/W

Rth(j-sp)

thermal resistance from

junction to solder point

[4] --55

K/W

Table 7.

Characteristics

Tamb =25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VF

forward voltage

[1]

IF = 10 mA

-

240

270

mV

IF = 100 mA

-

300

350

mV

IF = 500 mA

-

400

460

mV

IF = 1000 mA

-

480

550

mV

IR

reverse current

VR =5V

-

5

10

μA

VR =8V

-

7

20

μA

VR =10V

-

8

30

μA

VR =15V

-

10

50

μA

VR =20V

-

15

70

μA

Cd

diode capacitance

VR = 1 V; f = 1 MHz

-

4050pF

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