PMBD7000

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© NXP B.V. 2010. All rights reserved.

Product data sheet

Rev. 4 — 16 September 2010

3 of 12

NXP Semiconductors

PMBD7000

Double high-speed switching diode

5.

Limiting values

[1]

Single diode loaded.

[2]

Double diode loaded.

[3]

[4]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

6.

Thermal characteristics

[1]

Single diode loaded.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

repetitive peak reverse

voltage

-100

V

reverse voltage

-

100

V

forward current

[1] -215

mA

[2] -125

mA

repetitive peak forward

current

-450

mA

non-repetitive peak

forward current

square wave

[3]

4

A

-

1

A

-

0.5

A

total power dissipation

[1][4] -250

mW

Per device

junction temperature

-

150

°C

ambient temperature

−55

+150

°C

storage temperature

−65

+150

°C

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from

junction to ambient

in free air

[1][2] -

-

500

K/W

thermal resistance from

junction to tie-point

-

-

360

K/W