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3

IRHNJ57133SE, JANSR2N7485U3

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Radiation Characteristics

Fig a. Single Event Effect, Safe Operating Area

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Parameter

100K Rads (Si)

Units

Min

Max

Drain-to-Source Breakdown Voltage

130

—

V

Gate Threshold Voltage

2.0

4.5

Gate-to-Source Leakage Forward

—

100

nA

Gate-to-Source Leakage Reverse

—

-100

Zero Gate Voltage Drain Current

—

10

µA

Static Drain-to-Source

„

On-State Resistance (TO-3)

—

0.082

Ω

Static Drain-to-Source

„

Diode Forward Voltage

„

—

1.2

V

On-State Resistance (SMD-0.5)

—

0.08

Ω

Ion

LET

Energy

Range

V

(MeV)

(µm)

@V

@V

@V

@V

Br

36.7

309

39.5

130

130

130

130

130

I

59.8

341

32.5

130

130

130

100

50

Au

82.3

350

28.4

130

120

30

—

—

0

30

60

90

120

150

-20

-15

-10

-5

0

VGS

Br

I

Au

Table 2. Single Event Effect Safe Operating Area