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IRHNJ67230 Datasheet(PDF) 2 Page - International Rectifier |
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IRHNJ67230 Datasheet(HTML) 2 Page - International Rectifier |
2 / 9 page IRHNJ67230, JANSR2N7591U3 Pre-Irradiation 2 www.irf.com Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — 16 ISM Pulse Source Current (Body Diode) À —— 64 VSD Diode Forward Voltage — — 1.2 V Tj = 25°C, IS = 16A, VGS = 0V Ã trr Reverse Recovery Time — — 346 ns Tj = 25°C, IF = 16A, di/dt ≤ 100A/µs QRR Reverse Recovery Charge — — 3.5 µCVDD ≤ 25V Ã ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A For footnotes refer to the last page Note: Corresponding Spice and Saber models are available on International Rectifier Web site. * Current is limited by package Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 200 — — V VGS = 0V, ID = 1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.22 — V/°C Reference to 25°C, ID = 1.0mA Voltage RDS(on) Static Drain-to-Source On-State — — 0.13 Ω VGS = 12V, ID = 10A Resistance VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 1.0mA ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient — -10.25 — mV/°C gfs Forward Transconductance 10 — — S VDS = 15V, IDS = 10A Ã IDSS Zero Gate Voltage Drain Current — — 10 VDS= 160V ,VGS=0V —— 25 VDS = 160V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V Qg Total Gate Charge — — 42 VGS = 12V, ID = 16A Qgs Gate-to-Source Charge — — 15 nC VDS = 100V Qgd Gate-to-Drain (‘Miller’) Charge — — 15 td(on) Turn-On Delay Time — — 18 VDD = 100V, ID = 16A, tr Rise Time — — 32 VGS = 12V, RG = 7.5Ω td(off) Turn-Off Delay Time — — 41 tf Fall Time — — 10 LS + LD Total Inductance — 4.0 — Ciss Input Capacitance — 1450 — VGS = 0V, VDS = 25V Coss Output Capacitance — 210 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 3.8 — nA Ã nH ns µA Measured from the center of drain pad to center of source pad Rg Gate Resistance 0.9 Ω f = 1.0MHz, open drain Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case — — 1.67 °C/W |
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