Electronic Components Datasheet Search |
|
IRHNM57110 Datasheet(PDF) 2 Page - International Rectifier |
|
IRHNM57110 Datasheet(HTML) 2 Page - International Rectifier |
2 / 10 page 2 www.irf.com Pre-Irradiation IRHNM57110, JANSR2N7503U8 Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — 6.9 ISM Pulse Source Current (Body Diode) — — 27.6 VSD Diode Forward Voltage — — 1.2 V Tj = 25°C, IS = 6.9A, VGS = 0V trr Reverse Recovery Time — — 144 ns Tj = 25°C, IF = 6.9A, di/dt ≤ 100A/µs QRR Reverse Recovery Charge — — 633 nC VDD ≤ 50V ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A For footnotes refer to the last page Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case — — 5.4 °C/W Note: Corresponding Spice and Saber models are available on International Rectifier Web site. Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 100 — — V VGS = 0V, ID = 1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.13 — V/°C Reference to 25°C, ID = 1.0mA Voltage RDS(on) Static Drain-to-Source On-State — — 0.22 Ω VGS = 12V, ID = 4.4A Resistance VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 1.0mA ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient — -7.5 — mV/°C gfs Forward Transconductance 3.6 — — S VDS = 15V, IDS = 4.4A Ã IDSS Zero Gate Voltage Drain Current — — 10 VDS= 80V ,VGS = 0V —— 25 VDS = 80V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V Qg Total Gate Charge — — 15 VGS = 12V, ID = 6.9A Qgs Gate-to-Source Charge — — 4.0 nC VDS = 50V Qgd Gate-to-Drain (‘Miller’) Charge — — 5.0 td(on) Turn-On Delay Time — — 6.6 VDD = 50V, ID = 6.9A, tr Rise Time — — 5.4 VGS = 12V, RG = 7.5Ω td(off) Turn-Off Delay Time — — 34 tf Fall Time — — 15 LS + LD Total Inductance — 6.8 — Ciss Input Capacitance — 378 — VGS = 0V, VDS = 25V Coss Output Capacitance — 108 — pF f = 100KHz Crss Reverse Transfer Capacitance — 2.3 — nA Ã nH ns µA Measured from the center of drain pad to center of source pad Rg Gate Resistance Ω f = 1.0MHz, open drain 8.0 |
Similar Part No. - IRHNM57110 |
|
Similar Description - IRHNM57110 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |