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IRHNM57110 Datasheet(PDF) 2 Page - International Rectifier

Part # IRHNM57110
Description  Simple Drive Requirements
Download  10 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRHNM57110 Datasheet(HTML) 2 Page - International Rectifier

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Pre-Irradiation
IRHNM57110, JANSR2N7503U8
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
6.9
ISM
Pulse Source Current (Body Diode)

27.6
VSD Diode Forward Voltage
1.2
V
Tj = 25°C, IS = 6.9A, VGS = 0V „
trr
Reverse Recovery Time
144
ns
Tj = 25°C, IF = 6.9A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge
633
nC
VDD ≤ 50V „
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
RthJC
Junction-to-Case
5.4
°C/W
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
100
V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown —
0.13
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
0.22
VGS = 12V, ID = 4.4A
Resistance
VGS(th)
Gate Threshold Voltage
2.0
4.0
V
VDS = VGS, ID = 1.0mA
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient
-7.5
mV/°C
gfs
Forward Transconductance
3.6
S
VDS = 15V, IDS = 4.4A Ã
IDSS
Zero Gate Voltage Drain Current
10
VDS= 80V ,VGS = 0V
——
25
VDS = 80V,
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
VGS = -20V
Qg
Total Gate Charge
15
VGS = 12V, ID = 6.9A
Qgs
Gate-to-Source Charge
4.0
nC
VDS = 50V
Qgd
Gate-to-Drain (‘Miller’) Charge
5.0
td(on)
Turn-On Delay Time
6.6
VDD = 50V, ID = 6.9A,
tr
Rise Time
5.4
VGS = 12V, RG = 7.5Ω
td(off)
Turn-Off Delay Time
34
tf
Fall Time
15
LS + LD
Total Inductance
6.8
Ciss
Input Capacitance
378
VGS = 0V, VDS = 25V
Coss
Output Capacitance
108
pF
f = 100KHz
Crss
Reverse Transfer Capacitance
2.3
nA
Ã
nH
ns
µA
Measured from the center of
drain pad to center of source pad
Rg
Gate Resistance
f = 1.0MHz, open drain
8.0


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