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IRHQ57214SE Datasheet(PDF) 2 Page - International Rectifier |
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IRHQ57214SE Datasheet(HTML) 2 Page - International Rectifier |
2 / 8 page IRHQ57214SE Pre-Irradiation 2 www.irf.com Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) (Per Die) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 250 — — V VGS = 0V, ID = 1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.28 — V/°C Reference to 25°C, ID = 1.0mA Voltage RDS(on) Static Drain-to-Source On-State — — 1.5 VGS = 12V, ID = 1.2A Resistance — — 1.8 VGS = 12V, ID = 1.9A VGS(th) Gate Threshold Voltage 2.5 — 4.5 V VDS = VGS, ID = 1.0mA gfs Forward Transconductance 0.5 — — S VDS >=15V, IDS = 1.2A Ã IDSS Zero Gate Voltage Drain Current — — 10 VDS= 200V ,VGS=0V —— 25 VDS = 200V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V Qg Total Gate Charge — — 13 VGS =12V, ID = 1.9A Qgs Gate-to-Source Charge — — 3.9 nC VDS = 125V Qgd Gate-to-Drain (‘Miller’) Charge — — 5.4 td(on) Turn-On Delay Time — — 25 VDD = 125V, ID = 1.9A tr Rise Time — — 100 VGS =12V, RG = 7.5Ω td(off) Turn-Off Delay Time — — 35 tf Fall Time — — 35 LS + LD Total Inductance — 6.1 — Measured from the center of drain pad to center of source pad Ciss Input Capacitance — 338 — VGS = 0V, VDS = 25V Coss Output Capacitance — 53 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 2.6 — nA Ã nH ns µA Source-Drain Diode Ratings and Characteristics (Per Die) Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — 1.9 ISM Pulse Source Current (Body Diode) À — — 7.6 VSD Diode Forward Voltage — — 1.5 V Tj = 25°C, IS = 1.9A, VGS = 0V Ã trr Reverse Recovery Time — — 300 ns Tj = 25°C, IF = 1.9A, di/dt ≤ 100A/µs QRR Reverse Recovery Charge — — 771 nC VDD ≤ 25V Ã ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A Thermal Resistance (Per Die) Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case — — 10.4 °C/W Ω |
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