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IRHSNA57064 Datasheet(PDF) 1 Page - International Rectifier |
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IRHSNA57064 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 9 page  12/18/07 RAD-HARD IRHSNA57064 SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) www.irf.com 1 60V, N-CHANNEL Features: n Co-Pack N-channel RAD-Hard MOSFET and Schottky Diode n Ideal for Synchronous Rectifiers in DC-DC Converters up to 56A Output n Low Conduction Losses n Low Switching Losses n Low Vf Schottky Rectifier n Refer to IRHSLNA57064 for Lower Inductance For footnotes refer to the last page * Current is limited by package SMD-2 Description: The SynchFet family of Co-Pack RAD-Hard MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. RAD-Hard MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of Military and Space applications. Product Summary Part Number Radiation Level RDS(on) QG IRHSNA57064 100K Rads (Si) 6.5m Ω 160nC IRHSNA53064 300K Rads (Si) 6.5m Ω 160nC IRHSNA54064 600K Rads (Si) 6.5m Ω 160nC IRHSNA58064 1000K Rads (Si) 6.5m Ω 160nC Absolute Maximum Ratings Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain or Source Current 56* ID @ VGS = 12V, TC = 100°C Continuous Drain or Source Current 56* IDM Pulsed Drain Current À 224 PD @ TC = 25°C Max. Power Dissipation 250 W Linear Derating Factor 2.0 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy à 309 mJ IAR Avalanche Current À 56 A EAR Repetitive Avalanche Energy À 25 mJ IF (AV)@ TC = 25°C Schottky and Body Diode Avg. Forward Current  56* IF (AV)@ TC =100°C Schottky and Body Diode Avg. Forward Current  56* TJ, TSTG Opeating and Storage Temperature Range -55 to 125 Pckg. Mounting Surface Temp. 300 (for 5s) Weight 3.3 (Typical) g Pre-Irradiation A A °C PD-94323D |
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