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AN4870 Datasheet(PDF) 1 Page - Dynex Semiconductor |
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AN4870 Datasheet(HTML) 1 Page - Dynex Semiconductor |
1 / 5 page 1/5 AN4870 Application Note www.dynexsemi.com 80 100 120 140 160 180 200 Thyristor junction temperature - (˚C) 0 20 40 60 80 100 VDRM VRRM Fig.1 Thyristor de-rating curves The junction temperature ( T j ) of a power semiconductor in any particular situation profoundly affects its performance and reliability. During its working life a thyristor can experience a wide range of temperatures. Operating at –40˚C is not damaging but allowance must be made by the user for increased gate trigger current, latching current and holding current as well as slow turn-on (see application note AN4840 Gate Triggering and Gate Characteristics). Working in the range between room temperature and 125˚C gives the best compromise between ease of operation and operational life. T j = 125˚C is chosen as the design maximum value since above this, blocking current starts to increase rapidly, thus degrading voltage rating, see fig.1. The device becomes much more susceptible to over-voltage transients , high dv/dt, di/dt and surge current. In the case of the forward blocking junction there is an increasing chance of forward breakover triggering. For special applications it is possible to select devices to operate continuously with low leakage at T j = 140˚C but such devices may need to be fully characterised and rated on other parameters at 140˚C. Many applications involve infrequent current overloads for short periods and it is possible to allow T j to rise well above 125˚C in such situations. A typical situation is during a load short circuit when the device is protected by a fuse. In 50Hz circuits the thyristor may often have to carry short circuit current for up to 10ms. During this time T j can rise transiently to 300 - 500˚C without the junction being damaged. Peak temperature lags peak current by typically 2 or 3 milliseconds and, although falling, is still high at the end of the current pulse. If current is interrupted by a fuse, little or no reverse voltage appears across the device. However, the re-application of reverse voltage at such a high temperature can result in very high reverse recovery power dissipation. This escalates the junction temperture further and the subsequent high blocking current leads to reverse voltage failure by thermal runaway. Limit case surge currents are determined by experimental means using a 50Hz half sine of current and published in the data sheet. These I TSM limit values are used to determine the peak temperature ( Using I TSM for VR=0 ) and the temperature at the end of the current loop ( Using I TSM for VR = 50% VRRM ). These temperatures are then taken as the limit temperatures for the particular device. If temperatures in other applications are kept below these, then the condition will be safe. The method of calculating overload T j for the published ITSM currents and other overload conditions is discussed below. The overload above assumed a high speed fuse or circuit breaker will interrupt the supply before forward blocking voltage appears. Some overloads require that the device survives with AN4870 Effects Of Temperature On Thyristor Performance Application Note Replaces September 2000 version, AN4870-3.0 AN4870-3.1 July 2002 |
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