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MTB60A03KQ8 Datasheet(PDF) 5 Page - Cystech Electonics Corp. |
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MTB60A03KQ8 Datasheet(HTML) 5 Page - Cystech Electonics Corp. |
5 / 9 page CYStech Electronics Corp. Spec. No. : C122Q8 Issued Date : 2015.05.25 Revised Date : Page No. : 5/9 MTB60A03KQ8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 10 100 1000 0.1 1 10 100 VDS, Drain-Source Voltage(V) C oss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=250 μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 ID, Drain Current(A) Ta=25°C Pulsed VDS=5V Gate Charge Characteristics 0 2 4 6 8 10 02 4 6 8 Qg, Total Gate Charge(nC) VDS=15V ID=3.5A Maximum Safe Operating Area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) TA=25°C, Tj=150°C VGS=10V, RθJA=78°C/W Single Pulse DC 100ms RDSON Limited 100 μs 1ms 1s 10ms Maximum Drain Current vs Junction Temperature 0 1 2 3 4 5 6 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) TA=25°C, VGS=10V, RθJA=78°C/W |
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