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MTC7540DH8 Datasheet(PDF) 2 Page - Cystech Electonics Corp. |
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MTC7540DH8 Datasheet(HTML) 2 Page - Cystech Electonics Corp. |
2 / 13 page CYStech Electronics Corp. Spec. No. : C995H8 Issued Date : 2015.07.23 Revised Date : Page No. : 2/13 MTC7540DH8 CYStek Product Specification Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Limits N-channel P-channel Parameter Symbol 10s steady 10s steady Unit Drain-Source Breakdown Voltage BVDSS 20 -20 Gate-Source Voltage VGS ± 12 ± 12 V TA=25 °C, VGS=4.5V (-4.5V) 12 7.7 -8.9 -5.7 TA=70 °C, VGS=4.5V (-4.5V) IDSM 9.6 6.2 -7.1 -4.6 TC=25 °C, VGS=4.5V (-4.5V) 28.7 -21.6 Continuous Drain Current TC=100 °C, VGS=4.5V (-4.5V) ID 18.1 -13.7 Pulsed Drain Current (Note 1 & 2) IDM 30 -30 A TA=25 °C steady state 1.4 (Note 3) TA=70 °C steady state PDSM 0.8 (Note 3) TC=25 °C 23 Power Dissipation TC=100 °C PD 9.2 W Operating Junction and Storage Temperature Range Tj; Tstg -55~+150 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 5.5 t≤10s 35 Thermal Resistance, Junction-to-ambient, max (Note 3) Steady state RθJA 85 °C/W Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board; 125 °C/W when mounted on minimum copper pad. N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 20 - - VGS=0V, ID=250μA VGS(th) 0.5 - 1.2 V VDS=VGS, ID=250μA IGSS - - ±100 nA VGS=±12V, VDS=0V - - 1 VDS=20V, VGS=0V IDSS - - 5 μA VDS=20V, VGS=0V , Tj=55 °C - 10.5 14 ID=11.8A, VGS=4.5V *RDS(ON) - 13.1 17 m Ω ID=9.8A, VGS=2.5V *GFS - 20 - S VDS=5V, ID=11.8A Dynamic Ciss - 782 - Coss - 106 - Crss - 93 - pF VDS=10V, VGS=0V, f=1MHz *td(ON) - 8.2 - *tr - 21.2 - *td(OFF) - 49.8 - *tf - 11.4 - ns VDS=6V, ID=1A, VGS=4.5V, RG=6Ω |
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