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IRHYB597034CM Datasheet(PDF) 3 Page - International Rectifier |
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IRHYB597034CM Datasheet(HTML) 3 Page - International Rectifier |
3 / 8 page www.irf.com 3 Pre-Irradiation IRHYB597034CM International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Radiation Characteristics 1. Part number IRHYB597034CM 2. Part number IRHYB593034CM Fig a. Single Event Effect, Safe Operating Area International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. For footnotes refer to the last page Table 2. Single Event Effect Safe Operating Area Ion LET Energy Range VDS (V) (MeV/(mg/cm2)) (MeV) (µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V Br 37.9 252.6 33.1 - 60 - 60 - 60 - 60 - 60 I 59.7 314 30.5 - 60 - 60 - 60 - 45 - 25 Au 82.3 350 28.4 - 60 - 60 - 60 — — -70 -60 -50 -40 -30 -20 -10 0 0 5 10 15 20 VGS Br I Au Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter 100KRads(Si)1 300KRads(Si)2 Units Test Conditions Min Max Min Max BVDSS Drain-to-Source Breakdown Voltage -60 — -60 — V VGS = 0V, ID = -1.0mA VGS(th) Gate Threshold Voltage -2.0 -4.0 -2.0 -4.0 VGS = VDS, ID = -1.0mA IGSS Gate-to-Source Leakage Forward — -100 — -100 nA VGS =-20V IGSS Gate-to-Source Leakage Reverse — 100 — 100 VGS = 20 V IDSS Zero Gate Voltage Drain Current — -10 — -10 µA VDS = -48V, VGS =0V RDS(on) Static Drain-to-Source à — 0.087 — 0.087 Ω VGS = -12V, ID =-13A On-State Resistance (TO-3) RDS(on) Static Drain-to-Source On-State — 0.087 — 0.087 Ω VGS = -12V, ID =-13A Resistance(Low-OhmicTO-257AA) VSD Diode Forward Voltage à — -5.0 — -5.0 V VGS = 0V, IS = -20A à |
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