BLS6G2731-6G_15 datasheet(1/12 Pages) PHILIPS

Part #	BLS6G2731-6G

Description	LDMOS S-Band radar power transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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1.

Product profile

1.1 General description

6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz

range.

1.2 Features and benefits

 Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage

of 32 V, an IDq of 25 mA, a tp of 100 s and a  of 10 %:

 Output power = 6 W

 Power gain = 15 dB

 Efficiency = 33 %

 Integrated ESD protection

 High flexibility with respect to pulse formats

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (2.7 GHz to 3.1 GHz)

 Internally matched for ease of use

 Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances

(RoHS)

1.3 Applications

 S-Band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency

range

BLS6G2731-6G

LDMOS S-Band radar power transistor

Rev. 2 — 16 December 2014

Product data sheet

Table 1.

Typical performance

Typical RF performance at Tcase = 25 C; tp = 100 s;  = 10 %; IDq = 25 mA; in a class-AB

production test circuit.

Mode of operation

f

VDS

PL

Gp



D

tr

tf

(GHz)

(V)

(W)

(dB)

(%)

(ns)

pulsed RF

2.7 to 3.1

32

6

15

33

20

10

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling. You must use a ground strap or touch the PC case or other

grounded source before unpacking or handling the hardware.

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BLS6G2731-6G Datasheet(PDF) 1 Page - NXP Semiconductors

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