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BLS6G2731-6G Datasheet(PDF) 1 Page - NXP Semiconductors |
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BLS6G2731-6G Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 12 page 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. 1.2 Features and benefits Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 25 mA, a tp of 100 s and a of 10 %: Output power = 6 W Power gain = 15 dB Efficiency = 33 % Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2.7 GHz to 3.1 GHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) 1.3 Applications S-Band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency range BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 2 — 16 December 2014 Product data sheet Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 100 s; = 10 %; IDq = 25 mA; in a class-AB production test circuit. Mode of operation f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 2.7 to 3.1 32 6 15 33 20 10 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. You must use a ground strap or touch the PC case or other grounded source before unpacking or handling the hardware. |
Similar Part No. - BLS6G2731-6G_15 |
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Similar Description - BLS6G2731-6G_15 |
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