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BLS6G3135-20 Datasheet(PDF) 5 Page - NXP Semiconductors

Part # BLS6G3135-20
Description  LDMOS S-Band radar power transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BLS6G3135-20 Datasheet(HTML) 5 Page - NXP Semiconductors

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BLS6G3135-20_6G3135S-20
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 4 — 11 March 2013
5 of 13
NXP Semiconductors
BLS6G3135-20; BLS6G3135S-20
LDMOS S-Band radar power transistor
7.3 Graphs
VDS =32V; IDq =50mA; tp = 300 s;  =10%;
PL =20W.
VDS =32V; IDq =50mA; tp = 300 s;  =10 %.
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
Fig 2.
Power gain and drain efficiency as functions
of frequency; typical values
Fig 3.
Power gain as a function of load power; typical
values
VDS =32V; IDq =50mA; tp = 300 s;  =10%.
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
VDS =32V; IDq =50mA; tp = 300 s;  =10 %.
(1) f = 3.1 GHz
(2) f = 3.3 GHz
(3) f = 3.5 GHz
Fig 4.
Efficiency as a function of load power; typical
values
Fig 5.
Load power as a function of input power;
typical values
001aaf983
f (GHz)
3
3.6
3.4
3.2
11
13
9
15
17
Gp
(dB)
7
ηD
Gp
20
30
10
40
50
0
ηD
(%)
001aaf984
PL (W)
030
20
10
11
13
9
15
17
Gp
(dB)
7
(2)
(3)
(1)
001aaf985
PL (W)
030
20
10
30
40
20
50
60
ηD
(%)
10
(1)
(2)
(3)
Pi (W)
0
1.2
0.8
0.4
001aaf986
10
20
30
PL
(W)
0
(2) (3)
(1)


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