BLS6G3135-120_6G3135S-120_2

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 02 — 29 May 2008

2 of 12

NXP Semiconductors

BLS6G3135-120; BLS6G3135S-120

LDMOS S-Band radar power transistor

1.3 Applications

range

2.

Pinning information

[1]

Connected to flange

3.

Ordering information

4.

Limiting values

Table 2.

Pinning

Pin

Description

Simplified outline

Symbol

BLS6G3135-120 (SOT502A)

1

drain

2

gate

3

source

[1]

BLS6G3135S-120 (SOT502B)

1

drain

2

gate

3

source

[1]

3

2

1

sym112

1

3

2

3

2

1

sym112

1

3

2

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BLS6G3135-120

-

flanged LDMOST ceramic package; 2 mounting holes;

2 leads

SOT502A

BLS6G3135S-120 -

earless flanged LDMOST ceramic package; 2 leads

SOT502B

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Min

Max

Unit

drain-source voltage

-

60

V

gate-source voltage

−0.5

+13

V

drain current

-

7.2

A

storage temperature

−65

+150

°C

junction temperature

-

225

°C