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BLS6G3135-120 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BLS6G3135-120 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 12 page BLS6G3135-120_6G3135S-120_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 29 May 2008 2 of 12 NXP Semiconductors BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor 1.3 Applications I S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency range 2. Pinning information [1] Connected to flange 3. Ordering information 4. Limiting values Table 2. Pinning Pin Description Simplified outline Symbol BLS6G3135-120 (SOT502A) 1 drain 2 gate 3 source [1] BLS6G3135S-120 (SOT502B) 1 drain 2 gate 3 source [1] 3 2 1 sym112 1 3 2 3 2 1 sym112 1 3 2 Table 3. Ordering information Type number Package Name Description Version BLS6G3135-120 - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A BLS6G3135S-120 - earless flanged LDMOST ceramic package; 2 leads SOT502B Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage - 60 V VGS gate-source voltage −0.5 +13 V ID drain current - 7.2 A Tstg storage temperature −65 +150 °C Tj junction temperature - 225 °C |
Similar Part No. - BLS6G3135-120_15 |
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Similar Description - BLS6G3135-120_15 |
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