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IRLS3036PBF Datasheet(PDF) 1 Page - International Rectifier

Part # IRLS3036PBF
Description  High Efficiency Synchronous Rectification in SMPS
Download  10 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRLS3036PBF Datasheet(HTML) 1 Page - International Rectifier

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12/08/08
www.irf.com
1
HEXFET® Power MOSFET
S
D
G
PD -97358
IRLS3036PbF
IRLSL3036PbF
GD
S
Gate
Drain
Source
Applications
l DC Motor Drive
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Optimized for Logic Level Drive
l Very Low RDS(ON) at 4.5V VGS
l Superior R*Q at 4.5V VGS
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
VDSS
60V
RDS(on) typ.
1.9m
Ω
max.
2.4m
Ω
ID (Silicon Limited)
270Ac
ID (Package Limited)
195A
D2Pak
IRLS3036PbF
TO-262
IRLSL3036PbF
G
D
S
GD
S
Absolute Maximum Ratings
Symbol
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
f
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
e
mJ
IAR
Avalanche Current
d
A
EAR
Repetitive Avalanche Energy
l
mJ
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
k
–––
0.40
°C/W
RθJA
Junction-to-Ambient (PCB Mount, steady state)
j
–––
40
See Fig. 14, 15, 22a, 22b
A
°C
290
380
8.0
±16
2.5
-55 to + 175
300
Max.
270
c
190
c
1100
195
11


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International Rectifier		 IRLS3036PBF IRF-IRLS3036PBF Datasheet
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