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PMEG3002AELD Datasheet(PDF) 7 Page - NXP Semiconductors |
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PMEG3002AELD Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 14 page PMEG3002AELD All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 — 19 April 2011 7 of 14 NXP Semiconductors PMEG3002AELD 30 V, 0.2 A low VF MEGA Schottky barrier rectifier f=1MHz; Tamb =25 °C Fig 7. Diode capacitance as a function of reverse voltage; typical values Tj = 150 °C (1) δ =0.1 (2) δ =0.2 (3) δ =0.5 (4) δ =1 Tj = 125 °C (1) δ =1 (2) δ =0.9 (3) δ =0.8 (4) δ =0.5 Fig 8. Average forward power dissipation as a function of average forward current; typical values Fig 9. Average reverse power dissipation as a function of reverse voltage; typical values VR (V) 020 15 510 006aac586 20 25 15 10 5 30 35 Cd (pF) 0 IF(AV) (A) 0.0 0.3 0.2 0.1 006aac587 0.05 0.10 0.15 PF(AV) (W) 0.00 (1) (2) (3) (4) VR (V) 030 20 10 006aac588 0.05 0.10 0.15 PR(AV) (W) 0.00 (1) (2) (4) (3) |
Similar Part No. - PMEG3002AELD_15 |
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Similar Description - PMEG3002AELD_15 |
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