NXP Semiconductors

PMEG3010AESB

30 V, 1 A low VF MEGA Schottky barrier rectifier

PMEG3010AESB

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Product data sheet

18 June 2015

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7. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

reverse voltage

-

30

V

forward current

-

1.4

A

square wave

[1]

-

1

A

average forward current

square wave

-

1

A

-

4

A

non-repetitive peak forward

current

-

10

A

[2]

-

0.525 W

[3]

-

1

W

total power dissipation

[1]

-

1.78

W

junction temperature

-

150

°C

ambient temperature

-55

150

°C

storage temperature

-65

150

°C

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode

8. Thermal characteristics

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

[1][2]

-

-

240

K/W

[1][3]

-

-

125

K/W

thermal resistance

from junction to

ambient

in free air

[1][4]

-

-

70

K/W

thermal resistance

from junction to solder

point

[5]

-

-

15

K/W

[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode

[5] Soldering point of anode tab.