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PMEG3010ESB Datasheet(PDF) 6 Page - NXP Semiconductors |
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PMEG3010ESB Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 14 page NXP Semiconductors PMEG3010ESB 30 V, 1 A low VF MEGA Schottky barrier rectifier PMEG3010ESB All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 1 July 2015 6 / 14 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit V(BR)R reverse breakdown voltage IR = 1 mA; tp = 300 µs; δ = 0.02; Tj = 25 °C 30 - - V IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C - 205 - mV IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C - 265 - mV IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C - 340 375 mV IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C - 370 - mV IF = 500 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C - 425 475 mV IF = 700 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C - 455 - mV VF forward voltage IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C - 495 565 mV VR = 5 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C - 0.9 - µA VR = 10 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C - 1.6 5 µA VR = 20 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C - 3.5 12 µA IR reverse current VR = 30 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C - 12 45 µA VR = 1 V; f = 1 MHz; Tj = 25 °C - 86 - pF Cd diode capacitance VR = 10 V; f = 1 MHz; Tj = 25 °C - 32 - pF trr reverse recovery time IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A; Tj = 25 °C - 3.2 - ns |
Similar Part No. - PMEG3010ESB_15 |
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Similar Description - PMEG3010ESB_15 |
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